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| 1300 nm Laser in Receptacle Package, Medium Power STM 51004X STM 51005X * * * * Designed for application in fiber-optic networks Laser Diode with Multi-Quantum Well structure Suitable for bit rates up to 1 Gbit/s Ternary photodiode at rear mirror for monitoring and control of radiant power * Hermetically sealed subcomponent, similar to TO 18 * SM Pigtail with optional flange Type STM 51004G STM 51004A STM 51005G STM 51005A Ordering Code Q62702-P3001 Q62702-P3050 Q62702-P3061 Q62702-P3056 Connector/Flange FC / without flange DIN / without flange FC / with flange DIN / with flange Maximum Ratings Output power ratings refer to the SM fiber output. The operating temperature of the submount is identical to the case temperature. Parameter Module Operating temperature range at case Storage temperature range Soldering temperature tmax = 10 s, 2 mm distance from bottom edge of case Laserdiode Direct forward current Radiant power CW Reverse voltage Symbol Values Unit TC Tstg TS - 40 ... + 85 - 40 ... + 85 260 C C C IF max e 120 2 2 mA mW V VR max Semiconductor Group 1 02.95 STM 51004X STM 51005X Maximum Ratings (cont'd) Parameter Monitor Diode Reverse voltage Symbol Values Unit VR max 10 V Characteristics All optical data refer to a coupled 10/125 m SM fiber, TC = 25 C. Parameter Laser Diode Optical output power Emission wavelength center of range e = 0.5 mW Spectral bandwidth e = 0.5 mW (RMS) Threshold current (- 40 ... + 85 C) Forward voltage e = 0.5 mW Radiant power at threshold Slope efficiency Differential series resistance Rise time/Fall time Monitor Diode Dark current, VR = 5 V, e = 0 Photo current, e = 0.5 mW e > 1.2 1280 ... 1330 <5 2 ... 45 < 1.5 < 40 20 ... 100 <8 <1 mW nm nm mA V W mW/A ns Symbol Values Unit Ith VF eth rS tR, tF IR IP < 500 100 ... 1000 nA A Semiconductor Group 2 STM 51004X STM 51004X Laser Diode Radiant Power in Singlemode Fiber Relative Radiant Power e = f() 1.2 1 Relative Optical Power 0 10 20 30 Optical Power in mW 0.8 0.6 0.4 0.2 0 Forward Current in mA 100 90 80 70 60 50 40 30 20 10 0 1306 1308 1310 1312 1314 Wavelength in nm Laser Forward Current IF = f(VF) Monitor Diode Dark Current IR = f(TA) port = 0, VR = 5 V 100 90 Forward Current in mA 80 70 60 50 40 30 20 10 0 0 0.4 0.8 1.2 1.6 Forward Voltage in V Dark Current in nA 1000 100 10 1 0.1 0.01 -50 0 50 100 Temperature in C Semiconductor Group 3 STM 51004X STM 51005X Package Outlines (Dimensions in mm) STM 51004X STM 51005X (with flange) Semiconductor Group 4 |
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